Method of formation of dual gate structure for imagers

Details Method of formation of dual gate structure for imagers Method of formation of dual gate structure for imagers

2007-01-16

2007-01-16

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C438S250000, C438S243000, C438S241000, C257S298000

Reexamination Certificate

active

10714670

ABSTRACT:
A device, as in an integrated circuit, includes diverse components such as transistors and capacitors. After conductive layers for all types of components are produced, a silicide layer is provided over conductive layers, reducing resistance. The device can be an imager in which pixels in an array includes a capacitor and readout circuitry with NMOS transistors. Periphery circuitry around the array can include PMOS transistors. Because the silicide layer is formed after the conductive layers, it is not exposed to high temperatures and, therefore, migration and cross-contamination of dopants is reduced.

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