Method of formation of buried mirror semiconductive device

Details Method of formation of buried mirror semiconductive device Method of formation of buried mirror semiconductive device

1999-05-27

2000-11-21

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

H01L 2100

Patent

active

061501905

ABSTRACT:
A method for forming a buried optical mirror in an integrated circuit (IC) begins by forming an opening (18) within a substrate (12). The opening (18) is then filled with a plurality of dielectric layers (20-26) that have different indexes of refraction whereby a Bragg reflector can be formed. A chemical mechanical polishing (CMP) process is then used to planarize the layers (20-26) such that these layers (20-26) only reside within the opening (18) whereby a mirror is formed. Lateral selective epitaxial growth, polysilicon deposition and recrystallization, or wafer bonding is then used to form a single crystalline or near single crystalline semiconductive material (32b) over a top of the substrate (12) and the reflecting mirror. Photodevice(s) are then formed over the mirror in the region (28) of material (32b) whereby reflecting mirror (20-26) will improve the quantum efficiency and speed of the photodevice(s).

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