Method of formation of a capacitor with a solid electrolyte...

Details Method of formation of a capacitor with a solid electrolyte... Method of formation of a capacitor with a solid electrolyte...

2005-05-10

2005-05-10

Lebentritt, Michael S. (Department: 2824)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S239000

Reexamination Certificate

active

06890792

ABSTRACT:
A method of formation of a capacitor forming part of an electric circuit when producing a circuit board, consisting of forming a valve metal bottom electrode layer and a valve metal oxide dielectric layer on the same, then integrally forming a solid electrolyte layer comprised of an organic semiconductor and a top electrode layer comprised of metal on the same, this integral formation step consisting of the step of holding one surface of metal foil for the top electrode at a bonding wedge and making the other surface of the metal foil carry a powder of the organic semiconductor by compression bonding and heating and the step of compression bonding the organic semiconductor powder carried by compression bonding at the dielectric layer by a bonding wedge through metal foil, whereby a solid electrolyte layer comprised of an organic semiconductor sandwiched between the metal foil and dielectric layer and closely bonded with the two is formed, a capacitor built into a circuit board, a circuit board including a capacitor, and a method of production of the circuit board.

REFERENCES:
patent: 4609971 (1986-09-01), Shaffer
patent: 4729844 (1988-03-01), Tsuchiya et al.
patent: 4982312 (1991-01-01), Shindo et al.
patent: 5972052 (1999-10-01), Kobayashi et al.
patent: 6454817 (2002-09-01), Shin et al.
patent: 6498714 (2002-12-01), Fujisawa et al.

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