Method of formation for a via opening

Details Method of formation for a via opening Method of formation for a via opening

1998-08-24

2000-10-03

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438714, 438723, 438738, H01L 21302

Patent

active

061272760

ABSTRACT:
A method for forming a via opening includes first an oxide layer formed over a metal layer. Next, a first stage via opening is formed on the oxide layer by photolithography and dry etching. Then, a wet etching process is performed on the first stage via opening to form a completed via opening to just exposes the metal layer and widen the width of the via opening.

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