Method of fixing seed crystal and method of manufacturing...

Details Method of fixing seed crystal and method of manufacturing... Method of fixing seed crystal and method of manufacturing...

2006-11-28

2006-11-28

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

C117S089000, C117S095000, C117S107000

Reexamination Certificate

active

07141117

ABSTRACT:
A method of fixing a seed crystal to be used for growing a silicon carbide single crystal from the seed crystal that has been fixed to a graphite base, wherein the method includes: forming a layered product by placing a metallic material whose melting point is not higher than growth temperature of the single crystal on the graphite base, disposing the seed crystal on the metallic material, and then further placing a pressing member for imposing a load on the seed crystal thereon; heat-treating the layered product at a temperature to fix the graphite base, the metallic material, and the seed crystal to each other to form one body, with the temperature being not lower than the melting point of the metallic material but not higher than the growth temperature of the single crystal; cooling the layered product; and then removing the pressing member from the layered product. The present invention provides a method of fixing a seed crystal to be used for growing a silicon carbide single crystal that inhibits the development of macroscopic defects to extend in a grown single crystal by bonding the seed crystal and a graphite base for holding the seed crystal to each other with a metal carbide layer including no voids. The present invention also provides a method of manufacturing a single crystal using the fixing method.

REFERENCES:
patent: 5944890 (1999-08-01), Kitou et al.
patent: 6514338 (2003-02-01), Shigeto et al.
patent: 6797060 (2004-09-01), Shigeto et al.
patent: 9-110584 (1997-04-01), None
patent: 9-268096 (1997-10-01), None

Affiliated with

Also associated with

Rating

Method of fixing seed crystal and method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fixing seed crystal and method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fixing seed crystal and method of manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3653958