Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Reexamination Certificate
2005-05-10
2005-05-10
Feely, Michael J. (Department: 1712)
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
C427S096400, C427S299000, C427S532000, C427S535000, C427S553000, C427S557000, C427S558000
Reexamination Certificate
active
06890605
ABSTRACT:
An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising:(A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and(B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.
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U.S. Appl. No. 10/252,607, filed Sep. 24, 2002, Nishikawa, et al.
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U.S. Appl. No. 10/307,384, filed Dec. 2, 2002, Shiota, et al.
Nishikawa Michinori
Patz Matthias
Sekiguchi Manabu
Shiota Atsushi
Yamada Kinji
Feely Michael J.
JSR Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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