Method of film deposition using single-wafer-processing type...

Details Method of film deposition using single-wafer-processing type... Method of film deposition using single-wafer-processing type...

2005-07-26

2005-07-26

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

C427S255110

Reexamination Certificate

active

06921556

ABSTRACT:
A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber through at least one discharge hole formed through the susceptor via a back side and a periphery of a wafer placed on the susceptor during film deposition.

REFERENCES:
patent: 4854263 (1989-08-01), Chang et al.
patent: 5370739 (1994-12-01), Foster et al.
patent: 5902088 (1999-05-01), Fairbairn et al.
patent: 6174377 (2001-01-01), Doering et al.
patent: 6301434 (2001-10-01), McDiarmid et al.
patent: 6331212 (2001-12-01), Mezey, Sr.
patent: 6524955 (2003-02-01), Fukuda et al.
patent: 6630053 (2003-10-01), Yamagishi et al.
patent: 2001/0025600 (2001-10-01), Ikeda et al.
patent: 2002/0034862 (2002-03-01), Wada et al.
patent: 2002/0036065 (2002-03-01), Yamagishi et al.

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