Method of filling contact holes of a semiconductor device

Details Method of filling contact holes of a semiconductor device Method of filling contact holes of a semiconductor device

1991-11-27

1992-12-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437 52, 437188, 437193, 437194, 437196, 437202, H01L 2144, H01L 2148

Patent

active

051698030

ABSTRACT:
In this semiconductor device, contact holes extending from a lower interconnection layer containing diffusion layers at the surface of a Si substrate to an Al-involved interconnection layer formed above the Si substrate through the intermediation of an interlayer dielectric film are filled with Al alloy having an eutectic point lower than that of Al-Si alloy. Then, for example, an Al-Ge alloy is sputtered, reflowed and allowed to react with the Si film to convert into an Al-Ge-Si alloy. At the stage of forming the Al-Ge-Si alloy, the reflow ceases. This brings the reduction of junction leakage current from the diffusion layers. Similarly in the case of a high aspect ratio of contact hole, this technique enables to fully fill the contact hole with the above-mentioned Al alloy. Besides this technique enables direct interconnections in multilayer Al-involved interconnection structure of between an upper-layer Al-involved interconnection and diffusion layers, contributing to reduction of area required for interconnections.

REFERENCES:
patent: 3382568 (1968-05-01), Kulper
patent: 3501829 (1970-03-01), Corwin
patent: 3740835 (1973-06-01), Duncan
patent: 3902936 (1975-09-01), Price
patent: 4538344 (1985-09-01), Okumura et al.
Planarized Aluminum Metallization For Sub-0.5 .mu.m CMOS Technology, 1990 IEEE, IEDM 90, pp. 51-54, by F. S. Chen, et al.

Affiliated with

Also associated with

Rating

Method of filling contact holes of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of filling contact holes of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of filling contact holes of a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-960882