Method of filling contact holes for semiconductor devices and co

Details Method of filling contact holes for semiconductor devices and co Method of filling contact holes for semiconductor devices and co

1988-06-16

1990-02-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437187, 148DIG19, H01L 21285

Patent

active

048988413

ABSTRACT:
In a method of filling a contact hole of a semiconductor device, a layer of conducting material, such as a metal silicide, is formed on side walls of the contact hole, and metal is selectively deposited on the bottom of the contact hole and on the layer of metal silicide on the side walls of the contact hole to substantially fill the contact hole. The method provides a contact structure comprising a contact region of the semiconductor device defining the bottom of the contact hole, a layer of conducting material, such as a metal silicide, on the side walls of the contact hole, and a metal plug substantially filling the contact hole. The metal plug adheres to the layer of metal silicide on the side walls of the contact hole and to the contact region defining the bottom of the contact hole.

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patent: 4586968 (1986-05-01), Coello-Vera
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Silicon Processing For The VLSI Era, Tauber et al., pp. 391-392, 399-405.
"A Planar Metallization Process-Its Application to Tri-Level Aluminum Interconnection" by Moriya, et al., IEEE/1983, pp. 550-553.
Silicon Processing For The VLSI Era, S. Wolf and R. N. Tauber, 1986, pp. 169-173, 357-359, 377-378, 391-393, 397-400.

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