Fluent material handling – with receiver or receiver coacting mea – Processes – With material treatment
Patent
1988-07-21
1991-06-18
Cusick, Ernest G.
Fluent material handling, with receiver or receiver coacting mea
Processes
With material treatment
141 82, 141 4, 141 5, 141 7, 141 59, 156 99, G09F 900, G09F 113, G09F 100, B67D 537
Patent
active
050242555
ABSTRACT:
An improved method of filling a liquid crystal device with a blended ferroelectric liquid crystal material is disclosed. The method includes the step of disposing the blended ferroelectric liquid crystal material in an inner space formed in the liquid crystal device, with the temperature of the blended liquid crystal being maintained during the disposing step at a temperature higher than the transition temperature of any constituent of the blended liquid crystal material such that the blended liquid crystal material is transformed in its isotropic phase.
REFERENCES:
patent: 3701368 (1972-10-01), Stern
patent: 3909930 (1975-10-01), Gurtler
patent: 4064919 (1977-12-01), Stern et al.
patent: 4091847 (1978-05-01), Sorkin
patent: 4098301 (1978-07-01), Bloom et al.
patent: 4626303 (1986-12-01), Ogura
patent: 4753276 (1988-06-01), Inaba et al.
patent: 4922972 (1990-05-01), Watanabe et al.
patent: 4922974 (1990-05-01), Watanabe et al.
Mase Akira
Osabe Akio
Sakayori Hiroyuki
Sato Masahiko
Watanabe Toshio
Cusick Ernest G.
Semiconductor Energy Laboratory Co,. Ltd.
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