Method of field-controlled diffusion and devices formed thereby

Details Method of field-controlled diffusion and devices formed thereby Method of field-controlled diffusion and devices formed thereby

2006-12-22

2010-06-22

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S357000, C438S468000

Reexamination Certificate

active

07741147

ABSTRACT:
A technique for creating high quality Schottky barrier devices in doped (e.g., Li+) crystalline metal oxide (e.g., ZnO) comprises field-controlled diffusion of mobile dopant atoms within the metal oxide crystal lattice. When heated (e.g., above 550 K) in the presence of an electric field (e.g., bias to ground of +/−50 V) the dopant atoms are caused to collect to form an ohmic contact, leaving a depletion region. The size of the depletion region controls the thickness of the Schottky barrier. Metal-semiconductor junction devices such as diodes, photo-diodes, photo-detectors, MESFETs, etc. may thereby be fabricated.

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