Method of facet free selective silicon epitaxy

Details Method of facet free selective silicon epitaxy Method of facet free selective silicon epitaxy

1998-01-14

2000-06-13

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 97, 117935, C30B 2906, C30B 2302

Patent

active

060744782

ABSTRACT:
A flat selective silicon epitaxial thin film in which facet formation and loading effect are suppressed is grown by using a conventional LPCVD system which does not require an ultrahigh vacuum environment. Raw material gases for film formation and atomic hydrogen formed in an atomic hydrogen formation chamber 2 installed separately from a reaction chamber is introduced into the reaction chamber, at a growth temperature in the range of 750-900.degree. C. and under a reaction chamber pressure in the range of 1-30 Torr.

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