Method of fabrication ultra-frequency semiconductor device

Details Method of fabrication ultra-frequency semiconductor device Method of fabrication ultra-frequency semiconductor device

1997-06-26

2000-04-18

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438738, 438739, H01L 2100

Patent

active

060515066

ABSTRACT:
A method for forming a T-shape gate having a length below 0.25 .mu.m for use in ultra-frequency semiconductor devices is disclosed. The insulating layer is side-etched by using the gate mask pattern through a conventional photolithography, the length of the insulating layer being controlled by the side-etching. The length of the insulating layer determines the length of the T-shape gate for allowing the T-shape gate having the length below 0.25 .mu.m to be obtained.

REFERENCES:
patent: 4334349 (1982-06-01), Aoyama et al.
patent: 4959326 (1990-09-01), Roman et al.
patent: 5160408 (1992-11-01), Long
patent: 5372675 (1994-12-01), Wakabayashi et al.
patent: 5648294 (1997-07-01), Bayraktaroglu
English translation of Abstract of JP 61-12080 (Jan. 20, 1986).
English translation of Abstract for KR 96-19599 (Jun. 17, 1996).
Patent Abstracts of Japan, Publication No. 06132317, May 13, 1994.
Translation of Purpose and Constitution of Japanese Laid-Open No. 3-147337, Jun. 24, 1991.
Translation of Purpose and Constitution of Japanese Laid-Open No. 3-19241, Jan. 28, 1991.
Translation of Purpose and Constitution of Japanese Laid-Open 4-340231, Nov. 26, 1992.
Patent Abstracts of Japan, Publicaton No. 07074100, Mar. 17, 1995.
Patent Abstracts of Japan, Publication No. 06216209, Aug. 5, 1994.
Patent Abstracts of Japan, Publicaton No. 06333956, Dec. 2, 1994.

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