Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2006-01-24
2006-01-24
Chambliss, Alonzo (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S113000, C438S458000, C438S460000, C257S777000
Reexamination Certificate
active
06989285
ABSTRACT:
A method for increasing integrated circuit density is disclosed comprising stacking an upper wafer and a lower wafer, each of which having fabricated circuitry in specific areas on their respective face surfaces. The upper wafer is attached back-to-back with the lower wafer with a layer of adhesive applied over the back side of the lower wafer. The wafers are aligned so as to bring complementary circuitry on each of the wafers into perpendicular alignment. The adhered wafer pair is then itself attached to an adhesive film to immobilize the wafer during dicing. The adhered wafer pair may be diced into individual die pairs or wafer portions containing more than one die pair.
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IBM Technical Disclosure Bulletin, P.F. Iafrate, High Density and Speed Performance Chip Joining Procedure and Package, vol. 15, No. 4, p. 1281.
Chambliss Alonzo
Micro)n Technology, Inc.
TraskBritt
LandOfFree
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