Method of fabrication of semiconductor components having optoele

Details Method of fabrication of semiconductor components having optoele Method of fabrication of semiconductor components having optoele

1979-10-18

1980-10-21

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 148188, H01L 21225

Patent

active

042292379

ABSTRACT:
The top surface of a wafer of p-type ZnTe semiconductor material is subjected to double diffusion of an acceptor impurity and of a donor impurity so as to create in the ZnTe on the one hand a compensated region having high resistivity and on the other hand a surface injection region of small thickness, a metallic contact being finally formed on each face of the wafer.

REFERENCES:
patent: 3389024 (1968-06-01), Schimmer
patent: 3472711 (1969-10-01), Chow
patent: 3670220 (1972-06-01), Kun et al.
patent: 3745073 (1973-07-01), Kun et al.
patent: 3895975 (1975-07-01), Lindmayer
patent: 3911469 (1975-10-01), Wrobel
patent: 4038111 (1977-07-01), Dumas

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