Method of fabrication of self-aligned metal-semiconductor field

Details Method of fabrication of self-aligned metal-semiconductor field Method of fabrication of self-aligned metal-semiconductor field

1978-12-29

1980-09-16

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29579, 357 15, 357 23, 357 59, B01J 1700

Patent

active

042221641

ABSTRACT:
A method for the production of metal-semiconductor field effect transistors (MESFET) is described. Practice of the method allows one to produce self-aligning MESFETs with Si sources and drains in close proximity having metal gates therebetween.

REFERENCES:
patent: 3574010 (1971-04-01), Brown
patent: 3609477 (1971-09-01), Drangeid
patent: 3756924 (1973-09-01), Collins
patent: 3763408 (1973-10-01), Kano
patent: 3855690 (1974-12-01), Kim
patent: 3906541 (1975-09-01), Goronkin
patent: 3909925 (1975-10-01), Forbes
patent: 3943622 (1976-03-01), Kim
patent: 4029522 (1977-06-01), De La Moneda
IBM Tech. Bulletin, "FET Utilizing Schottky Barrier Principle," by Ames, vol. 9, No. 10, Mar. 1967, pp. 1470-1471.
IBM Tech. Bulletin, "Process for Obtaining . . . Liftoff," by Canavello, vol. 19, No. 10, Mar. 1977, p. 4048.

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