Method of fabrication of porous silicon light emitting diode arr

Details Method of fabrication of porous silicon light emitting diode arr Method of fabrication of porous silicon light emitting diode arr

1995-06-05

1996-09-03

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437905, 216 56, 1566621, H01L 213063, H01L 2177

Patent

active

055523285

ABSTRACT:
A porous silicon Light Emitting Diodes (LEDs) device and method for fabricating LEDs with supporting circuits on a silicon chip or wafer for a Full Width Array in which a switch diode structure is used to form the porous silicon LED element and later drives the LED after the LED is fabricated. The LED is formed by defining an area in the switch diode for placing an LED element. Epi silicon is deposited in the defined area; and the epi silicon is electrochemical etched to produce porous silicon. This procedure creates column-like Si structures of nanometer dimension which can efficiently emit visible to infrared light at room temperature. Next, the porous silicon LED chip can be cut and butted without excessive damage. In this way, the chips bearing both LEDs and drive circuitry are made of silicon and can be cut and accurately butted by known techniques to form a low cost, high resolution Full Width LED array.

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