Method of fabrication of MOS transistor

Details Method of fabrication of MOS transistor Method of fabrication of MOS transistor

1992-04-08

1992-12-15

Quach, T. N.

Fishing, trapping, and vermin destroying

437 69, 437162, 437238, 437968, H01L 21335

Patent

active

051716984

ABSTRACT:
The method of fabricating a MOS transistor comprises the steps of successively forming a polycrystalline silicon film and a first silicon oxide film on a semiconductor substrate, forming a silicon nitride film on the first silicon oxide film on an element region, converting the polycrystalline silicon film on an element separation region into a second silicon oxide film, forming a second silicon oxide film on the side of the polycrystalline silicon film in the element region, forming a channel stopper layer underneath the element separation region of the semiconductor substrate, forming a third oxide film on the element separation region of the semiconductor substrate, and removing selectively the polycrystalline silicon, first silicon oxide film and the silicon nitride film to form a gate electrode forming region of the MOS transistor region.

REFERENCES:
patent: 4978629 (1990-12-01), Komori et al.
patent: 5108937 (1992-04-01), Tsai et al.

Affiliated with

Also associated with

Rating

Method of fabrication of MOS transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabrication of MOS transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabrication of MOS transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2092508