Method of fabrication of Josephson tunnel junction

Details Method of fabrication of Josephson tunnel junction Method of fabrication of Josephson tunnel junction

1982-06-18

1983-11-01

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, 357 5, 427 62, 427 63, C23C 1500, H01L 3922

Patent

active

044129025

ABSTRACT:
There is disclosed a method of fabrication of a Josephson tunnel junction device. A surface of a base electrode of Nb or Nb compound is subjected to sputter cleaning and then to plasma oxidation in an atmosphere of a diluent gas and oxygen to form thereon an oxide layer serving as a tunnel barrier. A counter electrode is then formed on the oxide layer to provide the Josephson tunnel junction.

REFERENCES:
R. B. van Dover et al., "Superconductor-Normal-Superconductor Microbridges," J. Appl. Phys., vol. 52, No. 12, pp. 7327-7343 (Dec. 1981).
R. W. Freedman et al., "Selective Plasma Etching of Niobium," IBM Tech. Disc. Bull., vol. 20, pp. 1601-1603 (1977).
T. T. Foxe et al., "Reactive Ion Etching of Niobium," J. Vac. Sci. Technol., vol. 19, No. 4, pp. 1394-1397 (Nov. Dec. 1981).
S. A. Reible, "Reactive Ion Etching in the Fabrication of Niobrium Tunnel Junctions," IEEE Trans. on Magnetics, vol. MAG-17, No. 1, pp. 303-306 (Jan. 1981).
R. F. Broom et al., "Niobium Oxide-Barrier Tunnel Junction," IEEE Trans. Electron Devices, vol. Ed.-27, No. 10, pp. 1998-2008 (Oct. 1980).

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