Method of fabrication of isolated islands for complementary bipo

Details Method of fabrication of isolated islands for complementary bipo Method of fabrication of isolated islands for complementary bipo

1988-12-08

1990-02-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437 61, 357 34, 357 44, H01L 2972, H01L 2702

Patent

active

049006894

ABSTRACT:
A process includes selectively forming laterally adjacent complementary doped epitaxial layers over low resistive buried regions of a horizontally isolated substrate. Self-aligned oxide mask are used for the epitaxial deposition. Lateral dielectric isolation trenches at the complementary doped epitaxial boundary complete the isolation of the islands. Base and emitter regions are formed in the epitaxial collector layers.

REFERENCES:
patent: 3793088 (1974-02-01), Eckton, Jr.
patent: 4719185 (1988-01-01), Goth

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