Method of fabrication of integrated circuit chip containing EEPR

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 52, 437 60, 437919, H01L 218247, H01L 2182

Patent

active

055500722

ABSTRACT:
An EEPROM cell is formed in an IC chip by using only three masking steps in addition to those required for the basic CMOS transistors in the chip. A first mask layer is used to define source/drain regions of select and memory transistors within the EEPROM cell; a second mask layer is used to define a tunneling region of the memory transistor;and a third mask layer is used to define a floating gate of the memory transistor and a gate of the select transistor. A control gate of the memory transistor is formed using the same mask that is used to define the gates of the CMOS transistors. The third and fourth mask layers may also be used to form the lower and upper electrodes, respectively, of a capacitor.

REFERENCES:
patent: 4780431 (1988-10-01), Maggioni et al.
patent: 4851361 (1989-07-01), Schumann et al.
patent: 4859619 (1989-08-01), Wu et al.
patent: 4931847 (1990-06-01), Corda
patent: 5014098 (1991-05-01), Schlais et al.
patent: 5021848 (1991-06-01), Chiu
patent: 5036018 (1991-07-01), Mazzali
patent: 5057448 (1991-10-01), Kuroda
patent: 5243210 (1993-09-01), Naruke
patent: 5292681 (1994-03-01), Lee et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabrication of integrated circuit chip containing EEPR does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabrication of integrated circuit chip containing EEPR, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabrication of integrated circuit chip containing EEPR will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1055997

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.