Method of fabrication of heterogeneous integrated circuits...

Details Method of fabrication of heterogeneous integrated circuits... Method of fabrication of heterogeneous integrated circuits...

2011-07-05

2011-07-05

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Having enclosed cavity

C438S312000, C438S313000, C438S314000, C438S455000, C438S459000

Reexamination Certificate

active

07972936

ABSTRACT:
A heterogeneous integrated circuit and method of making the same. An integrated circuit includes a surrogate substrate including a material selected from the group consisting of Group II, Group III, Group IV, Group V, and Group VI materials and their combinations; at least one active semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials; and at least one transferred semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials. The at least one active semiconductor device and the at least one transferred device are interconnected.

REFERENCES:
patent: 5077231 (1991-12-01), Plumton et al.
patent: 5422501 (1995-06-01), Bayraktaroglu

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