Method of fabrication of electroluminescent and photodetecting d

Details Method of fabrication of electroluminescent and photodetecting d Method of fabrication of electroluminescent and photodetecting d

1979-03-21

1981-10-13

Weisstuch, Aaron

Metal treatment

Stock

Ferrous

29572, 29576B, 148 15, 357 30, H01L 3300, H01L 3100, H01L 3118

Patent

active

042951488

ABSTRACT:
A layer of thickness x.sub.j is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivity. Ions are implanted with sufficient energy to form a trapping region of thickness x.sub.1 at the surface of the semiconductor and to form beneath the trapping region an insulating region of thickness x.sub.3, with x.sub.1 <x.sub.j. The diode has high efficiency both for emission of light having well-defined wavelengths and for current generation when subjected to light radiation.

REFERENCES:
patent: 3366819 (1968-01-01), Crowder et al.
patent: 3732471 (1973-05-01), Hou et al.

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