Method of fabrication of an amorphous semiconductor device on a

Details Method of fabrication of an amorphous semiconductor device on a Method of fabrication of an amorphous semiconductor device on a

1977-09-22

1979-09-18

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 357 2, B01J 1700

Patent

active

041678060

ABSTRACT:
An active zone between a lower electrode deposited on a substrate and an upper electrode constitutes a portion of an amorphous semiconducting layer and is defined either by the dimensions of the upper electrode or by a window formed in an insulating layer. The method of fabrication consists in forming the two electrodes and the two active and insulating layers, the active layer and insulating layer being fabricated from amorphous compounds which are constituted either wholly or in part by the same elements.

REFERENCES:
patent: 3346788 (1967-10-01), Belasco
patent: 3590479 (1971-07-01), Devries
patent: 3893229 (1975-07-01), Avid
patent: 4095330 (1978-06-01), Kim

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