Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Reexamination Certificate
2008-07-31
2011-12-27
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
C438S051000, C438S106000, C257SE21499, C257SE29324, C257SE23180
Reexamination Certificate
active
08084332
ABSTRACT:
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
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Flannery, Jr. Anthony Francis
Nasiri Steven S.
Blum David S
Invensense Inc.
Sawyer Law Group P.C.
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