Method of fabrication of a P+nn+ diode and of a bipolar transist

Details Method of fabrication of a P+nn+ diode and of a bipolar transist Method of fabrication of a P+nn+ diode and of a bipolar transist

1989-08-14

1990-06-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 22, 437 31, 437133, 437937, 437904, H01L 21329, H01L 21331

Patent

active

049367811

ABSTRACT:
A method of fabrication of a p+nn+ diode and a bipolar transistor which incorporates this diode, uitilizing the effect of neutralization of donor atoms by atomic hydrogen consists in forming a layer of Group III-Group V material of n+ type on a substrate of Group III-Group V material, locally implanting acceptor ions with a view to forming, in the surface, the p+ region of the diode adjacent to an intermediary n+ region forming two metal contacts at the surface of the layer of Group III-Group V material situated in proximity to one another and with respect to the p+ and n+ regions of the diode, the portion of the intermediary n+ region contiguous with the p+ region being without of metal contact, and hydrogenating the structure, to form in that portion an n region, with the other portion of the intermediary region being provided with a metal contact being constituting the n+ region of the p+nn+ diode.

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