Method of fabrication of a monolithic integrated optical circuit

Details Method of fabrication of a monolithic integrated optical circuit Method of fabrication of a monolithic integrated optical circuit

1976-09-23

1978-09-19

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29577R, 350 9630, B01J 1700

Patent

active

041142578

ABSTRACT:
A method for fabricating a three-dimensional integrated optical circuit is disclosed. Selective liquid phase epitaxy is utilized to grow active electro-optic devices consisting of an I-bar mesa laser, a directional-coupler switch and a channel-waveguide modulator, and a passive electro-optic device consisting of a directional-coupler wherein all devices in the integrated optical circuit as grown on the substrate are interconnected by means of a three-dimensional waveguide structure. The active and passive device section of the substrate consists of an open area to allow for the selective epitaxial growth of an I-bar mesa laser or the formation of a metallized pattern in the fabrication of directional-coupler switches, channel-waveguide modulators and directional-couplers. Theses devices are interconnected by means of an optical waveguide structure which may have the form of a single or double heterojunction structure of the ridge waveguide type. By optionally embedding the single heterojunction waveguide structure with an optical material having a lower effective retractive index, lower loss of the transmitted light signal by the waveguide structure is achieved. Optical fiber structures may be connected to the end of the optical waveguide structures by several means, for example, of butting the fiber ends against a respectively fabricated I-bar end.

REFERENCES:
patent: 3900863 (1975-08-01), Kim
patent: 3902133 (1975-08-01), Watts
patent: 3948583 (1976-04-01), Tien
patent: 3984173 (1976-10-01), Shaw

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