Method of fabrication of a charge-coupled device

Details Method of fabrication of a charge-coupled device Method of fabrication of a charge-coupled device

1976-08-30

1978-01-03

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

357 24, B01J 1700

Patent

active

040658473

ABSTRACT:
The fabrication of a charge-coupled device consists in forming an insulating layer in the form of a periodic series of insulating steps, in depositing a metallic layer on alternate steps so as to form electrodes, in implanting regions doped with a type opposite to the substrate into the surface of the semiconductor by directing an ion beam through the insulating steps of small thickness which are transparent to the beam, and in connecting each electrode to a control line.

REFERENCES:
patent: 3697786 (1972-10-01), Smith
patent: 3739237 (1973-06-01), Shannon
patent: 3796932 (1974-03-01), Amelio
patent: 3852120 (1974-12-01), Johnson

Affiliated with

Also associated with

Rating

Method of fabrication of a charge-coupled device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabrication of a charge-coupled device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabrication of a charge-coupled device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-274061