Method of fabricating via first plus via last IC interconnect

Details Method of fabricating via first plus via last IC interconnect Method of fabricating via first plus via last IC interconnect

2011-07-26

2011-07-26

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S667000, C257S724000, C257S774000, C257S777000

Reexamination Certificate

active

07985620

ABSTRACT:
A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. The first set of vias are produced prior to circuitry on the die, and the second set of vias are produced after circuitry on the die. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.

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