Method of fabricating vertical-type double diffused mosfet havin

Details Method of fabricating vertical-type double diffused mosfet havin Method of fabricating vertical-type double diffused mosfet havin

1995-02-13

1996-09-24

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437 57, 437 58, 437 69, H01L 21265

Patent

active

055590454

ABSTRACT:
Disclosed are an improved vertical-type double diffused MOSFET which has a self-aligned gate structure and field oxide film and a method of fabricating the same. A silicon nitride film is selectively formed and a well region is formed, after which a self-aligned field oxide film is formed on the well region. After removing the silicon nitride film, a self-aligned gate oxide film is formed on an element formation area opposite to the well region. The self-aligned field oxide film overlays the well region. A gate structure has a stable low resistance caused by a desirable definition thereof. While, the self-aligned gate oxide film overlays the element formation area, but which has no overlaying area on the well region and the edge portion of the gate oxide film exists in the vicinity of the edge portion of the well region. The gate oxide film has a few crystal defects thereby reducing the gate short.

REFERENCES:
patent: 4434543 (1984-03-01), Schwabe et al.
patent: 4558508 (1985-12-01), Kinney et al.
patent: 4829019 (1989-05-01), Mitchell et al.
patent: 5024961 (1991-06-01), Lee et al.
patent: 5032530 (1991-07-01), Lowrey et al.
patent: 5072267 (1991-12-01), Hattori
patent: 5118641 (1992-06-01), Roberts
patent: 5132241 (1992-07-01), Su
patent: 5141882 (1992-08-01), Komori et al.

Affiliated with

Also associated with

Rating

Method of fabricating vertical-type double diffused mosfet havin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating vertical-type double diffused mosfet havin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating vertical-type double diffused mosfet havin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1928195