Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-08-30
2008-12-09
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S079000, C257S103000, C257SE33020
Reexamination Certificate
active
07462881
ABSTRACT:
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.
REFERENCES:
patent: 3602982 (1971-09-01), Kooi
patent: 4141135 (1979-02-01), Henry et al.
patent: 4406052 (1983-09-01), Cogan
patent: 5034068 (1991-07-01), Glenn et al.
patent: 5504036 (1996-04-01), Dekker et al.
patent: 5661074 (1997-08-01), Tischler
patent: 5739554 (1998-04-01), Edmong et al.
patent: 5929466 (1999-07-01), Ohba et al.
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 5972781 (1999-10-01), Wegleiter et al.
patent: 6066861 (2000-05-01), Hohn et al.
patent: 6067309 (2000-05-01), Onomura et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6100104 (2000-08-01), Haerle
patent: 6100545 (2000-08-01), Chiyo et al.
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6281526 (2001-08-01), Nitta et al.
patent: 6303405 (2001-10-01), Yoshida et al.
patent: 6320206 (2001-11-01), Coman et al.
patent: 6326294 (2001-12-01), Jang et al.
patent: 6329216 (2001-12-01), Matsumoto et al.
patent: 6339010 (2002-01-01), Sameshima
patent: 6350998 (2002-02-01), Tsuji
patent: 6358770 (2002-03-01), Itoh et al.
patent: 6365429 (2002-04-01), Kneissl et al.
patent: 6426512 (2002-07-01), Ito et al.
patent: 6479839 (2002-11-01), Nikolaev et al.
patent: 6510195 (2003-01-01), Chappo et al.
patent: 6614060 (2003-09-01), Wang et al.
patent: 6624491 (2003-09-01), Waitl et al.
patent: 6639925 (2003-10-01), Niwa et al.
patent: 6677173 (2004-01-01), Ota
patent: 6711192 (2004-03-01), Chikuma et al.
patent: 6744196 (2004-06-01), Jeon
patent: 6746889 (2004-06-01), Eliashevich et al.
patent: 6784463 (2004-08-01), Camras et al.
patent: 6818531 (2004-11-01), Yoo et al.
patent: 6846686 (2005-01-01), Saeki et al.
patent: 6869820 (2005-03-01), Chen
patent: 6960488 (2005-11-01), Brosnihan et al.
patent: 7250638 (2007-07-01), Lee et al.
patent: 2001/0014391 (2001-08-01), Forrest et al.
patent: 2001/0019134 (2001-09-01), Chang et al.
patent: 2001/0042866 (2001-11-01), Coman et al.
patent: 2002/0137244 (2002-09-01), Chen et al.
patent: 2002/0163302 (2002-11-01), Nitta et al.
patent: 2004/0033638 (2004-02-01), Bader
patent: 2004/0051105 (2004-03-01), Tsuda et al.
patent: 2004/0259279 (2004-12-01), Erchak et al.
patent: 2006/0027831 (2006-02-01), Kioke et al.
patent: 2006/0060866 (2006-03-01), Tezen
patent: 2006/0289886 (2006-12-01), Sakai
patent: 2007/0020790 (2007-01-01), Erchak et al.
patent: 2007/0048885 (2007-03-01), Jeon
patent: 2007/0122994 (2007-05-01), Sonobe et al.
patent: 100 22 879 (2000-12-01), None
patent: 2001339100 (2001-12-01), None
Song Y-K, et al; “A vertical injection blue light emitting diode in substrate separated InGaN heterostructures” vol. 74, published Jun. 14, 1999; pp. 3720-3722.
Michael Kneissl, et al., “Continuous-Wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates Obtained by Laser Liftoff”, IEEE Journal on Selected Topics in Quantum Electronics, vol. 7, No. 2, Mar./Apr. 2001; pp. 188-191.
William S. Wong, et al., “Continuous-Wave InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates”, Applied Physics Letters vol. 78, No. 9, Feb. 26, 2001; pp. 1198-1200.
William S. Wong, et al., “The integration of InxGa1−xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off”, Jpn. J. Appl. Phys. vol. 39 (2000) pp. L 1203-L 1205, Part 2, No. 12A, Dec. 1, 2000; pp. L1203-L1205.
William S. Wong, et al., “Continuous-Wave InGaN Multipe-Quantum-Well Laser Diodes on Copper Substrates”, Applied Physics Letters vol. 78, No. 9, Feb. 26, 2001; pp. 1198-1200.
William S. Wong, et al., “The Integration of InxGa1−xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off”, Jpn. J. Appl. Phys. vol. 39 (2000) pp. L 1203-L 1205, Part 2, No. 12A, Dec. 1, 2000; pp. L1203-L1205.
M.K. Kelly, et al., Optical Process for Liftoff of Group Ill-nitride Films, Physica Status Solidi(a) vol. 159, 1997, pp. R3-R4.
Wong et al, Integration of InGaN Laser Diodes with Dissimilar Substrates by Laser Lift-Off, 2001, Materials Research Society, pp. 12.2.1-12.2.5.
Jeong In-kwon
Lee Jong-Lam
Yoo Myung Cheol
LG Electronics Inc.
Mandala Jr. Victor A.
McKenna Long & Aldridge LLP
Pert Evan
LandOfFree
Method of fabricating vertical structure LEDs does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating vertical structure LEDs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating vertical structure LEDs will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4029811