Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S022000, C438S455000, C438S478000, C257S099000, C257S615000, C257SE29089, C257SE21094, C257SE21294
Reexamination Certificate
active
07977133
ABSTRACT:
A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspects the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro-less plating. In one aspect, the vertical structure is a GaN-based vertical structure, the crystal substrate includes sapphire and the metal support structure includes copper. Advantages of the invention include fabricating vertical structure LEDs suitable for mass production with high reliability and high yield.
REFERENCES:
patent: 3453722 (1969-07-01), Ramsey, Jr. et al.
patent: 4999694 (1991-03-01), Austin et al.
patent: 5331180 (1994-07-01), Yamada et al.
patent: 5912477 (1999-06-01), Negley
patent: 5990495 (1999-11-01), Ohba
patent: 6187606 (2001-02-01), Edmond et al.
patent: 6201262 (2001-03-01), Edmond et al.
patent: 6232623 (2001-05-01), Morita
patent: 6281867 (2001-08-01), Kurematsu et al.
patent: 6331208 (2001-12-01), Nishida et al.
patent: 6455340 (2002-09-01), Chua et al.
patent: 6459100 (2002-10-01), Doverspike et al.
patent: 6562648 (2003-05-01), Wong et al.
patent: 6610551 (2003-08-01), Doverspike et al.
patent: 6713789 (2004-03-01), Shibata et al.
patent: 6756614 (2004-06-01), Hatano et al.
patent: 6818531 (2004-11-01), Yoo et al.
patent: 6967981 (2005-11-01), Chua et al.
patent: 7015117 (2006-03-01), Urbanek
patent: 7105857 (2006-09-01), Nagahama et al.
patent: 7250638 (2007-07-01), Lee et al.
patent: 7384807 (2008-06-01), Yoo
patent: 2001/0010941 (2001-08-01), Morita
patent: 2001/0042866 (2001-11-01), Coman et al.
patent: 2002/0001943 (2002-01-01), Akram
patent: 2002/0036295 (2002-03-01), Nunoue et al.
patent: 2002/0050596 (2002-05-01), Otsuka et al.
patent: 2002/0052076 (2002-05-01), Khan et al.
patent: 2002/0053676 (2002-05-01), Kozaki
patent: 2002/0056914 (2002-05-01), Akram
patent: 2002/0098711 (2002-07-01), Klein et al.
patent: 2002/0102819 (2002-08-01), Tamura et al.
patent: 2002/0102830 (2002-08-01), Ishida
patent: 2002/0106879 (2002-08-01), Akram
patent: 2002/0117677 (2002-08-01), Okuyama et al.
patent: 2002/0146855 (2002-10-01), Goto et al.
patent: 2002/0182889 (2002-12-01), Solomon et al.
patent: 2003/0006429 (2003-01-01), Takahashi et al.
patent: 2003/0040133 (2003-02-01), Horng et al.
patent: 2003/0047129 (2003-03-01), Kawahara et al.
patent: 2003/0080344 (2003-05-01), Yoo
patent: 2003/0114017 (2003-06-01), Wong et al.
patent: 2003/0122141 (2003-07-01), Wong et al.
patent: 2003/0139037 (2003-07-01), Kobayashi et al.
patent: 2003/0189212 (2003-10-01), Yoo
patent: 2003/0189215 (2003-10-01), Lee et al.
patent: 2004/0033638 (2004-02-01), Bader et al.
patent: 2004/0072383 (2004-04-01), Nagahama et al.
patent: 2004/0245543 (2004-12-01), Yoo
patent: 2005/0082543 (2005-04-01), Alizadeh et al.
patent: 2005/0189551 (2005-09-01), Peng et al.
patent: 2005/0242365 (2005-11-01), Yoo
patent: 2006/0006554 (2006-01-01), Yoo
patent: 2006/0105542 (2006-05-01), Yoo
patent: 2007/0221944 (2007-09-01), Yoo
patent: 2005005421 (2005-01-01), None
Schlain, D; McCawley, F. X. ; Smith, G. R. “electrodepositioin of titanium diboride coating”, 1976.
R.J. von Gutfeld; S.R. Vigliotti, “High-speed electroplating of copper using the laser-jet technique”, 1985, appl. phys. lett. 46, 1003.
“International Search Report”, Issued in PCT Application No. PCT/US2005/41467; Mailing Date: May 19, 2008.
“Written Opinion”, Issued in PCT Application No. PCT/US2005/41467; Mailing Date: May 19, 2008.
“International Report on Patentability”, Issued in PCT Application No. PCT/US2005/041467; Mailing Date: Jul. 3, 2008.
“International Search Report”, Issued in PCT Application No. PCT/US05/14634; Mailing Date: Aug. 4, 2008.
“Written Opinion”, Issued in PCT Application No. PCT/US05/14634: Mailing Date: Aug. 4, 2008.
“Non Final Office Action”, U.S. Appl. No. 11/165,110, Mailing Date: Jan. 7, 2009.
“First Office Action”, China Application No. 200480018620.2, Mailing Date: Jul. 4, 2008.
“Second Office Action”, Issued in Chinese Application No. 200580020642.7; Mailing Date: May 15, 2009.
“International Search Report”, Issued in PCT Application No. PCT/US2008/065355; Mailing Date: Sep. 29, 2008.
“Written Opinion”, Issued in PCT Application No. PCT/US2008/065355; Mailing Date: Sep. 29, 2008.
“International Preliminary Report on Patentability”, Issued in PCT Application No. PCT/US/2005/014634; Mailing Date: Sep. 12, 2008.
International Preliminary Report on Patentability, mailed Jan. 4, 2007, for International Application No. PCT/US2004/017297; Filed on Jun. 3, 2004; Applicant: Yoo, Myung Cheol.
International Written Opinion, mailed Nov. 22, 2006, for International Application No. PCT/US2004/017297; Filed on Jun. 3, 2004; Applicant: Yoo, Myung Cheol.
International Written Opinion, mailed Oct. 2, 2006, for International Application No. PCT/US2005/22785; Filed on Jun. 22, 2005; Applicant: Verticle.
International Search Report, mailed Nov. 22, 2006, for International Application No. PCT/US2004/017297; Filed on Jun. 3, 2004; Applicant: Yoo, Myung Cheol.
International Search Report, mailed Oct. 2, 2006 for International Application No. PCT/US2005/22785; Filed on Jun. 22, 2005; Applicant: Verticle.
“Notice of Office Action,” mailed Nov. 29, 2005, for U.S. Appl. No. 10/861,743, filed Jun. 3, 2004; Inventors: Yoo, Myung Cheol.
“Notice of Office Action,” mailed Jun. 14, 2006, for U.S. Appl. No. 10/861,743, filed Jun. 3, 2004; Inventors: Yoo, Myung Cheol.
“Notice of Office Action,” mailed Jun. 4, 2007, for U.S. Appl. No. 10/861,743, filed Jun. 3, 2004; Inventors: Yoo, Myung Cheol.
“Notice of Office Action,” mailed Jan. 4, 2007, for U.S. Appl. No. 10/861,743, filed Jun. 3, 2004; Inventors: Yoo, Myung Cheol.
“Notice of Office Action,” mailed Sep. 27, 2006, for U.S. Appl. No. 11/117,084, filed Apr. 27, 2005; Inventors: Yoo.
“Notice of Office Action,” mailed Apr. 3, 2007, for U.S. Appl. No. 11/117,084, filed Apr. 27, 2005; Inventors: Yoo.
Wong, et al. “Continuous-Wave InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates,” Feb. 26, 2001, Applied Physics Letters vol. 78, pp. 1198-1200, No. 9, http://apl.aip.org/apl/copyright.jsp.
Kneissl, et al. “Continuous-Wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates Obtained by Laser Liftoff,” Mar./Apr. 2001, IEEE Journal on Selected Topics in Quantum Electronics, pp. 188-191, vol. 7, No. 2.
Worw, et al. “The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off,” Dec. 1, 2000, Jpn. J. Appl. Phys. vol. 39 (2000), pp. L 1203-L 1205, Part 2, No. 12A.
“Non-Final Office Action”, date mailed Nov. 15, 2007, U.S. Appl. No. 11/165,110, filed Jun. 22, 2005; Applicant: Verticle.
“Written Opinion”, date mailed Dec. 7, 2007, International Application No. PCT/US05/22785; Filed on Jun. 22, 2005; Applicant: Verticle.
“International Preliminary Report on Patentability”, issued in PCT Application No. PCT/US2008/065355; Mailing Date: Dec. 10, 2009.
Edwards Angell Palmer & & Dodge LLP
Kim Kongsik
Kim Su C
Nguyen Khiem D
Verticle, Inc.
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