Method of fabricating vertical FET with Schottky diode

Details Method of fabricating vertical FET with Schottky diode Method of fabricating vertical FET with Schottky diode

1997-04-23

1999-09-21

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

438570, H01L 21332

Patent

active

059565780

ABSTRACT:
A method of fabricating an integrated VFET and Schottky diode including forming a source region on the upper surface of a substrate so as to define a channel. First and second spaced apart gates are formed on opposing sides of the source region so as to abut the channel, thereby forming a channel structure. Schottky metal is positioned on the upper surface of the substrate proximate the channel structure to define a Schottky diode region and form a Schottky diode. A source contact is formed in communication with the source region and the Schottky metal, and a drain contact is formed on the lower surface of the substrate.

REFERENCES:
patent: 5818084 (1998-10-01), Williams et al.

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