Method of fabricating UMOS semiconductor devices using a self-al

Details Method of fabricating UMOS semiconductor devices using a self-al Method of fabricating UMOS semiconductor devices using a self-al

1997-06-30

1999-08-17

Booth, Richard A.

Semiconductor device manufacturing: process

Making regenerative-type switching device

438169, H01L 21332, H01L 2100

Patent

active

059406895

ABSTRACT:
A method of fabricating a UMOS semiconductor device includes a blanket implant of an N type dopant into a surface of a substrate (for forming source regions), a high energy implant of a P type dopant into the substrate (for forming body regions), an etch through a hard mask to form trenches and mesas (each of the mesas having a source region at its top and a body region below), and concurrently (i) providing a gate dielectric on the sidewalls of the trenches and (ii) redistributing the dopants so that the body regions extend deeper into the substrate beneath the centers of the mesas than adjacent the walls of the trenches. Contact windows are etched in the mesas to allow electrical contact with the source regions and the body regions. The initial implant of P type dopant may be a blanket implant or an implant through a mask which concentrates the P type dopant in the centers of the mesas.

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patent: 5506153 (1996-04-01), Brunner et al.
patent: 5798287 (1998-08-01), Ronsisvalle
patent: 5872028 (1999-02-01), Yedinak et al.
patent: 5874338 (1999-02-01), Ferla et al.

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