Method of fabricating turning mirror using sacrificial...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S022000, C438S027000, C257SE31001, C257SE31127

Reexamination Certificate

active

07741136

ABSTRACT:
The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.

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Akiyama, S. et al.; “Air Trench Bends and Splitters for Dense Optical Integration in Low Index Contrast”; Journal of Lightwave Technology, Jul. 2005.

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