Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-05-13
2010-11-23
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S076000, C257S079000, C257S081000, C257S087000, C257S091000, C257S095000, C257S098000, C438S022000, C372S043010
Reexamination Certificate
active
07838866
ABSTRACT:
The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.
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Fitz John L.
Hinkel Daniel Stephen
Horst Scott C.
Morelli Robert D.
Pham Thanh V
The United States of America as represented by the Director of t
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