Method of fabricating turning mirror using sacrificial...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S076000, C257S079000, C257S081000, C257S087000, C257S091000, C257S095000, C257S098000, C438S022000, C372S043010

Reexamination Certificate

active

07838866

ABSTRACT:
The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.

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patent: 7485892 (2009-02-01), Ooi et al.
patent: 2007/0177647 (2007-08-01), Noda et al.
U.S. Appl. No. 09/412,682, filed Nov. 1, 2001, Smith et al.
Hsu, W. et al; “A Sub-Micron Capacitive Gap Process for Multiple-Metal-Electrode Lateral Micromech. Resonators”;Tech.Digest,14th Int'l IEEE Micro Electro Mech. Conf.;Jan. 1.
Rennon, S. et al.; “12 um long edge-emitting quantum-dot laser”; Electronics Letters, May 2001.
Akiyama, S. et al.; “Air Trench Bends and Splitters for Dense Optical Integration in Low Index Contrast”; Journal of Lightwave Technology, Jul. 2005.

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