Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-06-16
2009-11-03
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S027000, C438S031000, C257SE31001, C257SE31127
Reexamination Certificate
active
07611914
ABSTRACT:
The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.
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Fitz John L.
Hinkel Daniel S.
Horst Scott C.
Ferragut Jennifer P.
Ghyka Alexander G
Morelli Robert D.
Mustapha Abdulfattah
The United States of America as represented by the Director, Nat
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