Method of fabricating trench isolated cross-point memory array

Details Method of fabricating trench isolated cross-point memory array Method of fabricating trench isolated cross-point memory array

2005-12-06

2005-12-06

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S330000, C438S384000, C438S587000

Reexamination Certificate

active

06972211

ABSTRACT:
Resistive cross-point memory devices are provided, along with methods of manufacture and use. The memory devices are comprised by an active layer of resistive memory material interposed between upper electrodes and lower electrodes. A bit region located within the resistive memory material at the cross-point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. A diode is formed between at the interface between the resistive memory material and the lower electrodes, which may be formed as doped regions, isolated from each other by shallow trench isolation. The resistive cross-point memory device is formed by doping lines, which are separated from each other by shallow trench isolation, within a substrate one polarity, and then doping regions of the lines the opposite polarity to form diodes. Bottom electrodes are then formed over the diodes with a layer of resistive memory material overlying the bottom electrodes. Top electrodes may then be added at an angled to form a cross-point array defined by the lines and the top electrodes.

REFERENCES:
patent: 5869843 (1999-02-01), Harshfield
patent: 6703249 (2004-03-01), Okazawa et al.
patent: 6841411 (2005-01-01), Varghese
patent: 6911667 (2005-06-01), Pichler et al.
patent: 2002/0028528 (2002-03-01), Ohtaka

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