Method of fabricating topside structure of a semiconductor devic

Details Method of fabricating topside structure of a semiconductor devic Method of fabricating topside structure of a semiconductor devic

1995-12-28

1998-03-17

Ryan, Patrick

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428210, 428688, 428901, 437228, 528 12, B32B 900

Patent

active

057284539

ABSTRACT:
The present method and apparatus provides a thin layer of oxynitride over a device including a patterned metal layer, application of a planarizing SOG layer over the thin oxynitride layer, removal of thin portions of the SOG layer by etching to expose portions of the thin oxynitride layer, and application of a thick oxynitride layer to form a strong bond with the thin oxynitride layer. A thin nitride layer, transparent to UV light, may then be applied to the resulting structure prior to application of plastic packaging material.

REFERENCES:
patent: 4775550 (1988-10-01), Chu
patent: 4965226 (1990-10-01), Gootzen
patent: 5217926 (1993-06-01), Langley
patent: 5527872 (1996-06-01), Allman

Affiliated with

Also associated with

Rating

Method of fabricating topside structure of a semiconductor devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating topside structure of a semiconductor devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating topside structure of a semiconductor devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-955852