Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-06-09
1984-10-30
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29576E, 29578, 29580, 148 15, 148174, 148175, 156612, 156615, 156DIG63, 357 4, 357 49, 357 50, 357 54, H01L 2120, H01L 21265
Patent
active
044792972
ABSTRACT:
A method for fabricating a three-dimensional multi-layer integrated circuit of single crystalline CeO.sub.2 and Si is proposed.
This method is characterized in that a single crystalline CeO.sub.2 insulation layer, or the like, is formed on a single crystalline Si substrate. An isolation region is formed in the single crystalline Si substrate. The region is transformed into a SiO.sub.2 insulation layer by selectively introducing oxygen ions through the single crystalline CeO.sub.2 insulation layer and reacting the oxygen ions with the single crystalline Si.
An epitaxial growth single crystalline Si layer is formed on the single crystalline CeO.sub.2 insulation layer.
Predetermined processes, such as forming a single crystalline CeO.sub.2 layer, are performed thereafter to form the three-dimensional structures of semiconductor elements such as MOS transistors and bipolar transistors with high packing density and reliability.
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Tamura et al., "Si Bridgining Epitaxy from Si Windows onto SiO.sub.2 by Q-Switched Ruby Laser Pulse Annealing," Japanese Journal of Applied Physics, vol. 19, No. 1, Jan., 1980, pp. L23-26.
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Mizutani Yoshihisa
Takasu Shin'ichiro
Saba William G.
Tokyo Shibaura Denki Kabushiki Kaisha
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