Method of fabricating three-dimensional epitaxial layers utilizi

Details Method of fabricating three-dimensional epitaxial layers utilizi Method of fabricating three-dimensional epitaxial layers utilizi

1977-07-13

1979-10-16

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29579, 29580, 148 15, 156612, 156647, 156649, 357 16, 357 17, 357 55, 357 56, 357 60, H01L 21203, H01L 2906

Patent

active

041712340

ABSTRACT:
Three-dimensional structures having a suitable geometrical configuration are directly formed on one major surface of a substrate so that an epitaxial molecular beam may be incident on preselected regions, and the angles of incidence of epitaxial molecular beams are varied. As a result the arrival rates of molecular beams are varied from one region to another on the substrate so that a three-dimensional epitaxial layer in which the physical properties are different from one region of a submicron across to another may be grown.

REFERENCES:
patent: 3865625 (1975-02-01), Cho et al.
patent: 3906541 (1975-09-01), Goronkin
patent: 4099305 (1978-07-01), Cho et al.
Ilegems et al., "Epitaxial Growth . . . GaAs Injection Lasers", J. Crystal Growth, 31, 1975, pp. 158-164.
Tsang et al., "Profile . . . Chemical Etching . . . System", Applied Physics Letters, vol. 28, No. 1, Jan. 1976, pp. 44-46.
Ludeke et al., "Fabrication . . . Injection Laser", I.B.M. Tech. Discl. Bull., vol. 15, No. 2, Jul. 1972, pp. 546-547.
Chang et al., "Fabrication for Multilayer Semiconductor Devices", Ibid., vol. 15, No. 2, Jul. 1972, pp. 365-366.
Dumke et al., "GaAs Field-Effect . . . Gates", I.B.M. Tech. Discl. Bull., vol. 14, No. 4, Sep. 1971, pp. 1248-1249.
Merz et al., "Tapered Couplers . . . Molecular Beam Epitaxy", Applied Physics Letters, vol. 26, No. 6, Mar. 15, 1975, pp. 337-340.
Nagata et al., "Self-Masking . . . Molecular-Beam Method", J. Applied Physics, vol. 48, No. 3, Mar. 1977, pp. 940-942.

Affiliated with

Also associated with

Rating

Method of fabricating three-dimensional epitaxial layers utilizi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating three-dimensional epitaxial layers utilizi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating three-dimensional epitaxial layers utilizi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-803935