Method of fabricating thin monocrystalline semiconductive layer

Details Method of fabricating thin monocrystalline semiconductive layer Method of fabricating thin monocrystalline semiconductive layer

1975-02-27

1977-01-18

Powell, William A.

Coating processes

Electrical product produced

Condenser or capacitor

29580, 148175, 148187, 156626, 156657, B44D 118, H01L 750

Patent

active

040040461

ABSTRACT:
An extremely thin monocrystalline semiconductive layer over an electrical insulator is disclosed, as well as its method of fabrication. The semiconductive layer is of high quality to provide an electrically uniform substrate for fabrication of semiconductive devices. The electrical insulator is also thin, providing a short path for thermal conduction from the semiconductive device. The method of fabricating the structure lends itself to inclusion of a buried layer, either by diffusion or by performing an epitaxial growth at a particular point in the process. The process also lends itself to an optional growth of an epitaxial layer on the semiconductive layer. The insulator may be made of an oxide of the semiconductive layer material, or it may be made of silicon nitride or silicon oxynitride.

REFERENCES:
patent: 3171762 (1965-03-01), Rutz
patent: 3312879 (1967-04-01), Godejahn
patent: 3422321 (1969-01-01), Tombs
patent: 3509433 (1970-04-01), Schroeder
patent: 3523842 (1970-08-01), Glendinning

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