Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2002-07-22
2003-03-11
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S149000, C438S151000, C438S479000, C438S517000
Reexamination Certificate
active
06531330
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method of fabricating a flat panel display. In particular, the present invention relates to a method of fabricating a thin film transistor (TFT) flat panel display.
2. Description of the Related Art
FIGS. 1A
to
1
D illustrate the conventional method of fabricating a TFT liquid crystal flat panel display. Referring to
FIG. 1A
, a gate electrode
2
is formed on a substrate
1
, and then an insulating layer
3
is formed to cover the gate electrode
2
. Then, an amorphous silicon layer
40
and a silicon nitride
50
are formed on the insulating layer
3
. Referring to
FIG. 1B
, an etching stopper
5
is formed by etching the silicon nitride
50
. Referring to
FIG. 1C
, a doping silicon layer
6
(to be n+ doped amorphous silicon) is formed on the etching stopper
5
and the amorphous silicon
40
. Referring to
FIG. 1D
, a metal layer is formed on the substrate
1
, and then is etched to form a source electrode
7
and a drain electrode
8
. Finally, a passivation layer
9
is formed. In the etching process, part of the metal layer and the doping silicon layer
6
are removed, and the etching stopper
5
is used for preventing the amorphous silicon layer
40
form etching damage.
The conventional method can be used to fabricate TFT flat displays; however it still has the spaces for improvement and simplification.
SUMMARY OF THE INVENTION
In order to improve and simplify the above-mentioned conventional manufacturing steps, the present invention proposes a new method of fabricating a TFT flat panel display, merely requiring four mask processes.
The present invention proposes a method of fabricating a TFT flat display is characterized by: (1) using the first mask process for patterning the first conductive layer/gate insulating layer/amorphous silicon layer of the TFT, (2) using the second mask process for defining the passivation layer and the etching stopper, (3) using the third mask process for forming the Source/Drain, and (4) using the fourth mask process for forming the pixel electrode, whereby simplifying the fabricating process of the TFT flat panel display.
REFERENCES:
patent: 6372535 (2002-04-01), Lyu
patent: 2002/0121639 (2002-09-01), So et al.
Lay Chung-Wen
Wu Meng-Yueh
AU Optronics Corp.
Isaac Stanetta
Ladas & Parry
Niebling John F.
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