Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-04-03
2007-04-03
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S197000, C438S381000, C257S395000, C257S399000, C257S703000
Reexamination Certificate
active
10969179
ABSTRACT:
A method of fabricating a thin film transistor array substrate is provided. The method includes forming a first conductive pattern group on a substrate using a first etch resist and a first soft mold, the first conductive pattern group including a gate electrode and a gate line; forming a gate insulating film on the substrate and the first conductive pattern group; forming a second conductive pattern group and a semiconductor pattern on the gate insulating film using a second etch resist and a second soft mold, the second conductive pattern group having a source electrode, a drain electrode, and a data line, the semiconductor pattern defining a channel region between the source electrode and the drain electrode; forming a passivation film on the gate insulating film, the second conductive pattern group and the semiconductor pattern using a third etch resist and a third soft mold, the passivation film defining a contact hole therethrough; and forming a third conductive pattern group on the passivation film using a fourth etch resist and a fourth soft mold, the third conductive pattern group having a pixel electrode.
REFERENCES:
patent: 6818923 (2004-11-01), Kim et al.
patent: 7001541 (2006-02-01), Dhar
patent: 2003/0197182 (2003-10-01), Kim et al.
patent: 2003/0197187 (2003-10-01), Kim et al.
patent: 2006/0121815 (2006-06-01), Kim et al.
Chae Gee Sung
Kim Jin Wuk
LG.Philips LCD Co. , Ltd.
Morgan & Lewis & Bockius, LLP
Nhu David
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