Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-09-06
2005-09-06
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S347000, C257S360000, C257S409000, C257S529000
Reexamination Certificate
active
06940095
ABSTRACT:
A method of fabricating a thin film transistor array is provided. A first patterned conductive layer that distributes over an area range exceeding the designated display region is formed over a substrate. A first dielectric layer is formed over the substrate, wherein the first dielectric layer has the thickness getting smaller toward the edge, so that the first patterned conductive layer outside the designated display region is exposed. A second patterned conductive layer is formed over the first dielectric layer. The second patterned conductive layer and the exposed first patterned conductive layer are electrically connected. A second dielectric layer having a plurality of contact openings therein is formed over the substrate. A plurality of pixel electrodes is formed over the second dielectric layer such that the pixel electrode and the second patterned conductive layer are electrically connected through the contact openings. Finally, various layers outside the designated display regions are removed.
Jianq Chyun IP office
Pham Long
Quanta Display Inc.
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