Method of fabricating thin-film transistor

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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C257S040000

Reexamination Certificate

active

07901978

ABSTRACT:
The core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.

REFERENCES:
patent: 6303516 (2001-10-01), Morita et al.
patent: 7041530 (2006-05-01), Nunoshita et al.
patent: 2007/0181945 (2007-08-01), Nakamura
patent: A-08-148426 (1996-06-01), None
patent: A-H11-087242 (1999-03-01), None
patent: A-2005-200425 (2005-07-01), None
patent: WO 2004/033366 (2004-04-01), None
International Search Report for corresponding International application No. PCT/JP2006/306307 mailed on May 30, 2006.
International Preliminary Report on Patentability and Written Opinion of the International Searching Authority for corresponding International application No. PCT/JP2006/306307 mailed Oct. 16, 2007.

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