Method of fabricating thin film calibration features for...

Details Method of fabricating thin film calibration features for... Method of fabricating thin film calibration features for...

2008-01-29

2008-01-29

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

C438S017000, C257S048000

Reexamination Certificate

active

07323350

ABSTRACT:
A method of making and using thin film calibration features is described. To fabricate a calibration standard according to the invention raised features are first formed from an electrically conductive material with a selected atomic number. A conformal thin film layer is deposited over the exposed sidewalls of the raised features. The sidewall material is selected to have a different atomic number and is preferably an nonconductive such as silicon dioxide or alumina. After the nonconductive material deposition, a controlled directional RIE process is used to remove the insulator layer deposited on the top and bottom surface of the lines and trenches. The remaining voids between the sidewalls of the raised features are filled with a conductive material. The wafer is then planarized with chemical mechanical planarization (CMP) to expose the nonconductive sidewall material on the surface. The nonconductive sidewall material will be fine lines embedded in conductive material.

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Electron Microscopy Sciences, “Calibration Equipment” Internet web page, http://www.emsdiasum.com/microscopy/products/sem/standards.aspx, copy printed on Jul. 19, 2004.

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