Method of fabricating surface-emission type light-emitting...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation

Reexamination Certificate

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C438S046000, C438S930000, C438S949000, C372S049010

Reexamination Certificate

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06900069

ABSTRACT:
A method of fabricating a surface-emission type light-emitting device which emits light in a direction perpendicular to a semiconductor substrate, includes the following steps (a) to (e). (a) A step of forming a column-shaped section by etching at least a part of a multilayer film. (b) A step of forming a first resin layer so as to cover the column-shaped section. (c) A step of forming a second resin layer by changing the solubility of the first resin layer in a liquid. (d) A step of immersing, for a specific period of time, at least the column-shaped section and the second resin layer in a liquid in which the second resin layer dissolves, thereby removing the second resin layer at least in the area formed over the column-shaped section. (e) A step of forming an insulating layer by curing the second resin layer.

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patent: A-2000-101185 (2000-04-01), None
Technical Report of IEICE, LQE98-141, Feb. 1999, Institute of Electronics, Information and Communication Engineers.

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