Method of fabricating surface contacts for buried layer into die

Details Method of fabricating surface contacts for buried layer into die Method of fabricating surface contacts for buried layer into die

1980-04-18

1981-09-22

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576W, 29578, 148 15, H01L 2122

Patent

active

042908310

ABSTRACT:
Low resistance contact paths to selected buried layers in dielectrically isolated islands are formed by V-etching the selected island moats in a substrate, non-selectively diffusing impurities into the surface of the substrate and selected moats, V-etching to form all the moat structure, forming a dielectric layer on said surface and moats, applying support material to over-fill said moats and cover said surface, removing the opposite surface of said substrate to expose support material, and forming devices in said opposite surface.

REFERENCES:
patent: 3722079 (1973-03-01), Beasom
patent: 3815222 (1974-06-01), Mitarai et al.
patent: 3858237 (1974-12-01), Sawazaki et al.
patent: 3865649 (1975-02-01), Beasom
patent: 3938176 (1976-02-01), Sloan
patent: 4146905 (1979-03-01), Appels et al.

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