Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2007-05-22
2007-05-22
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257SE25006
Reexamination Certificate
active
11057171
ABSTRACT:
Techniques are shown in which substrates having a first layer of a first material and second layer of a second material, wherein the second material is less noble than the first material, is provided by bonding the first and second layers together with an amorphous layer interposed there between. The amorphous material may be deposited on a bonding face of the first layer, second layer, or both, before the operation of bonding the first and second layers. The layer with less noble material may be a supporting layer and the other layer may be an active layer for forming components in optics, electronics, or opto-electronics. The amorphous layer may be polished before the bonding operation.
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Coleman W. David
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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